Ionization and mass spectrometry of decaborane for shallow implantation of boron into silicon

Journal of the Electrochemical Society

Volumn 147, Issue 11, 2000, Pages 4329-4332

  Sosnowski, M ^a   Albano, M A ^a   Babaram, V ^a   Gurudath, R ^a   Poate, J M ^a   Jacobson, Dale ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ION BEAMS; ION IMPLANTATION; IONIZATION; MASS SPECTROMETRY; MOSFET DEVICES; SILICON;

DECABORANE;

SEMICONDUCTING BORON;

EID: 0034323908     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1394064     Document Type: Article

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