Decaborane as ion source material for boron implantation

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 49-54

  Sosnowski, Marek ^a   Gurudath, Ravidath ^a   Poate, John ^a   Mujsce, Anthony ^b   Jacobson, Dale ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; DIFFUSION IN SOLIDS; DISSOCIATION; ION IMPLANTATION; ION SOURCES; IONIZATION OF SOLIDS; KINETIC ENERGY; MOS DEVICES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON;

DECABORANE; TRANSIENT ENHANCED DIFFUSION (TED) PULSES;

SEMICONDUCTOR JUNCTIONS;

EID: 0032691808     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-49     Document Type: Article

References (13)

1. "The National Technology Roadmap for Semiconductors", Semiconductor Industry Association, 1994.
2. Applied Materials Product Announcement 1996.
3. N.W. Cheung, W. En, E. Jones, and C. Yu, "Plasma immersion ion implantation of semiconductors", Mat. Re.sSoc. Symp. Proc. vol. 279, p. 297, 1993.
4. 14), International Electron Device Meeting-1996, IEEE, pp. 17.1.1-17.1.4.
5. 1. Yamada, J. Matsuo, Z. Insepov, D. Takeuchi, N. Toyoda, "Surface processing by gas cluster ion beams at the atomic level", J.Vac.Sci.Technol. vol. A14, p.781, 1996.
6. K. Goto, J. Matsuo, Y. Tada, T. Tanaka, Y. Momiyama, T. Sugii, and I. Yamada, "A High Performance PMOSFET using Decaborane Ion Implantation and 2-step Activation Annealing Process", International Electron Device Meeting-1997, IEEE, pp. 18.4.1-18.4.4.
7. A. E. Michel, W. Rausch, P. A. Rousheims, and R. H. Kastl, "Rapid annealing and the anomalous diffusion of ion implanted boron into silicon", Appl. Phys. Lett. vol. 50, 416(1987).
8. A. Agarwal, H.J. Gossmann, D.C. Jacobson, D. J. Eaglesham, M. Sosnowski, J. M. Poate, I. Yamada I., J. Matsuo, and T. E. Haynes, Appl. Phys. Letters, vol. 73, pp.2015-2017, 1998.
9. H.J. Gossman, F. C. Unterwald, and H. S. Luftman, J. Appl. Phys. vol. 73, 8237 (1993).
10. M. D. Giles, J. Electrochem. Soc. vol. 138, 138 (1991).
11. A. Agarwal, D. J. Eaglesham, L. Pelaz, D.C. Jacobson, T. E. Haynes, and E. Erokin, Appl. Phys. Letters, vol. 71, 3141 (1997).
12. Dallas T. Kurd, An Introduction to the Chemistry of Hydrides, Wiley, New York 1952.
13. M. Donatucci and L. Wang, ATMI, private communication.