Electrical properties of Sc Schottky barrier diodes fabricated on argon-ion sputtered p-GaAs

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 1 PART A/B, 1998, Pages

  Goodman, Stewart A ^a   Auret, F Danie ^a   Deenapanray, Prakash N K ^a   Myburg, Gerrit ^a  

^a UNIVERSITY OF PRETORIA   (South Africa)

Author keywords

Current voltage; p GaAs; Schottky; Sputter

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; EPITAXIAL GROWTH; ION BOMBARDMENT; NUMERICAL METHODS; SCANDIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE MEASUREMENT;

CURRENT VOLTAGE MEASUREMENT; SPUTTER ETCHING;

SCHOTTKY BARRIER DIODES;

EID: 0031700121     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l10     Document Type: Article

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