1.2 V operation power heteroj unction FET's for digital cellular applications

IEEE Transactions on Electron Devices

Volumn 45, Issue 2, 1998, Pages 361-365

  Yamaguchi, Keiko ^a   Iwata, Naotaka ^a   Kuzuhara, Masaaki ^a   Takayama, Yoichiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

PERSONAL DIGITAL CELLULAR (PDC) SYSTEMS;

FIELD EFFECT TRANSISTORS;

EID: 0032001802     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.658667     Document Type: Article

References (6)

1. N. Iwata, K. Inosako, and M. Kuzuhara, "2.2 V operation power heterojunction FET for personal digital cellular telephones," Electron. Lett., vol. 31, no. 25, pp. 2213-2215, 1995.
2. K. Inosako, N. Iwata, and M. Kuzuhara, "1.2 V operation 1.1 W heterojunction FET for portable radio applications," in 1995IEEEIEDM Tech. Dig., pp. 185-188.
3. N. Iwata, K. Yamaguchi, and M. Kuzuhara, "Double-doped power heterojunction FET for 1.5 V digital cellular applications," in Abstr. Topical Workshop on Heterostructure Microelectronics '96, pp. 66-67.
4. N. Iwata, K. Inosako, and M. Kuzuhara, "3 V operation L-band power double-doped hetero-junction FET's," in 1993 IEEE MTT-S Dig., 1993, pp. 1465-1468.
5. K. Inosako, N. Iwata, and M. Kuzuhara, "Power heterojunction FET's for low voltage digital cellular applications," IEICE Trans. Electron., Vol. E78, no. 9, pp. 1241-1245, 1995.
6. T. Tanaka, H. Furukawa, H. Tatenaka, T. Ueda, A. Noma, T. Fukui, K. Tateoka, and D. Ueda, "1.5 V operation GaAs spike-gate power FET with 65% power-added efficiency," in 1995 IEEEIEDM Tech. Dig., pp. 181-184.