Surface and bulk properties of GaAs(001) treated by selenium layers

Surface Science

Volumn 468, Issue 1-3, 2000, Pages 109-121

  Feng, P X ^a   Riley, J D ^a   Leckey, R C G ^a   Pigram, P J ^a   Hollering, M ^b   Ley, L ^b  

^a LA TROBE UNIVERSITY   (Australia)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; DEPOSITION; DESORPTION; INTERFACES (MATERIALS); PHOTOEMISSION; SEMICONDUCTING SELENIUM; SPECTROSCOPIC ANALYSIS;

SURFACE-SENSITIVE PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034318757     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00797-4     Document Type: Article

References (17)

1. Rousiere O., Lemoine D., Quemerais A., Assi C.K., Granger Q., Triboulet R. Semicond. Sci. Technol. 13:1998;622.
2. Zahn D.R.T., Krost A., Kolodziejczyk M., Richter W. J. Vac. Sci Technol. B. 10:1992;2077.
3. Sandroff C.J., Hegde M.S., Farrow L.A., Bhat R., Harbison J.P., Chang C.C. J. Appl. Phys. 67:1990;586.
4. Turco F.S., Sandroff C.J., Hegde M.S., Tamargo M.C. J. Vac. Sci. Technol. B. 8:1990;856.
5. Gundel S., Spahn W., Landwehy G. J. Crystal Growth. 184/185:1998;80.
6. Schroter T., Chasse A., Eckardt I., Tiedtke K., Wanger N., Zahn D.R.T., Nowak C., Hempelmann A., Richter W. Surf. Sci. 307-309:1994;650.
7. Scimeca T., Watanabe Y., Berrigan R., Oshima M. Phys. Rev. B. 46:1992;10201.
8. Bradshaw A.M., et al. BESSY Annual Report. 1984;63 BESSY, Berlin.
9. Leckey R.C.G., Riley J.D. Appl. Surf. Sci. 22/23:1985;196.
10. Kahn A. Surf. Rev. Lett. 3:1996;1579.
11. Fan Y., Karpov I., Bratina B., Sorba L., Gladfelter W., Franciosi A. J. Vac. Sci. Technol. B. 14:1996;623.
12. Joyce J.J., Del Giudice M., Weaver J.H. J. Electron Spectrsc. Relat. Phenom. 49:1989;31.
13. J. Xue, Ph.D. thesis, La Trobe University, Australia, 1998.
14. Wertheim G.K., Dicenzo S.B. J. Electron Spectrosc. Relat. Phenom. 37:1985;57.
15. Le Lay G., Mao D., Kahn A., Hwu Y., Margaritondo G. Phys. Rev. B. 43:1991;14301.
16. Chen W., Kaln A., Soukiassian P., Mangat P.S., Gaines J., Ponzoni C., Olego D. Phys. Rev. B. 49:1994;10790.
17. Hohenecker St., Kampen T.U., Zahn D.R.T. J. Vac. Sci. Technol. B. 16:1998;2317.