Surface properties of passivated Hg0.8Zn0.2Te

Semiconductor Science and Technology

Volumn 13, Issue 6, 1998, Pages 622-629

  Rousiere O ^a   Lemoine, D ^a   Quemerais A ^b   Assi, C K ^b   Granger, R ^a   Triboulet, R ^c  

^a INSA DE RENNES   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005316185     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/6/014     Document Type: Article

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