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Volumn 18, Issue 6, 2000, Pages 3158-3161

Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; POISSON DISTRIBUTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

EID: 0034317712     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319683     Document Type: Article
Times cited : (4)

References (11)
  • 11
    • 36549100456 scopus 로고
    • Computer program was taken from the World Wide Web
    • I.-H. Tan, G. L. Snider, L. D. Chang, and E. L. Hu, J. Appl. Phys. 68, 4071 (1990); Computer program was taken from the World Wide Web at http://www.nd.edu/~gsnider/
    • (1990) J. Appl. Phys. , vol.68 , pp. 4071
    • Tan, I.-H.1    Snider, G.L.2    Chang, L.D.3    Hu, E.L.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.