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Volumn 18, Issue 6, 2000, Pages 3158-3161
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Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CAPACITANCE;
ELECTRIC POTENTIAL;
MOLECULAR BEAM EPITAXY;
POISSON DISTRIBUTION;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
CARRIER DISTRIBUTION PROFILES;
SEMICONDUCTING FILMS;
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EID: 0034317712
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1319683 Document Type: Article |
Times cited : (4)
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References (11)
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