Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristics

Applied Physics Letters

Volumn 69, Issue 6, 1996, Pages 812-814

  Chen, F Y ^a   Fang, Y K ^a   Sun, M J ^a   Chen, Jiann Ruey ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000252387     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117900     Document Type: Article

References (7)

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3. S.-Y. Wu, IEEE Trans. Electron Devices ED-21, 499 (1974).
4. K. Sugibuchi, Y. Kurogi, and N. Endo, J. Appl. Phys. 46, 2877 (1975).
5. M. Okayama and Y. Hamakawa, Ferroelectrics 63, 243 (1985).
6. Y. Matsui, Ph.D. dissertation, Osaka University Faculty of Engineering Science Toyonaka, Osaka, 1982.
7. J. P. Uyemura, Fundamentals of MOS Digital Integrated Circuits (Addison Wesley, Reading, MA, 1988), p. 21, Chap. 1.