Dislocation and grain boundary energies in Si and Ge from an anharmonic bond charge model

Journal de Physique III

Volumn 7, Issue 12, 1997, Pages 2281-2292

  Teichler, H ^a   Wilder, J ^a,b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL SYMMETRY; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; MATHEMATICAL MODELS; SEMICONDUCTING GERMANIUM;

ANHARMONIC BOND CHARGE MODEL;

SEMICONDUCTING SILICON;

EID: 0031355987     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997259     Document Type: Article

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