SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 33, Issue 14, 1997, Pages 1258-1260

Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator

(5) Rao, R V V V J a Chong, T C a Lau, W S a Tan, L S a Lim, N a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

Field effect transistors; MISFET; Semiconductor devices

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

FREQUENCY DISPERSION CHARACTERISTICS;

MISFET DEVICES;

EID: 0031551164 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19970805 Document Type: Article

Times cited : (3)

References (7)

1
- 0026168878
- High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
- CHEN, CH.-L., SMITH, F.W., CLIFTON, B.J., MAHONEY, L.J., MANFRA, M.J., and CALAWA, A.R.: 'High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator', IEEE Electron. Device Lett., 1991, 12, pp. 306-308
- (1991) IEEE Electron. Device Lett. , vol.12 , pp. 306-308
- Chen, Ch.-L.¹ Smith, F.W.² Clifton, B.J.³ Mahoney, L.J.⁴ Manfra, M.J.⁵ Calawa, A.R.⁶

2
- 0027614869
- High I-V product LT-GaAs MISFET structure
- LIPKA, K., SPLINGART, B., and KOHN, B.: 'High I-V product LT-GaAs MISFET structure', Electron. Lett., 1993, 29, pp. 1170-1172
- (1993) Electron. Lett. , vol.29 , pp. 1170-1172
- Lipka, K.¹ Splingart, B.² Kohn, B.³

3
- 0027838494
- Temperature investigation of the gate-drain diode of power MESFET with low-temperature-grown (Al)GaAs passivation
- YIN, L.-W., NGUYEN, N.X., HWANG, Y., IBBETSON, J.P., KOLBAS, R.M., GOSSARD, A.C., and MISHRA, U.K.: 'Temperature investigation of the gate-drain diode of power MESFET with low-temperature-grown (Al)GaAs passivation', J. Electron. Mater., 1993, 22, pp. 1503-1505
- (1993) J. Electron. Mater. , vol.22 , pp. 1503-1505
- Yin, L.-W.¹ Nguyen, N.X.² Hwang, Y.³ Ibbetson, J.P.⁴ Kolbas, R.M.⁵ Gossard, A.C.⁶ Mishra, U.K.⁷

4
- 0027810680
- 0.7As
- 0.7As', J. Electron. Mater., 1993, 22, pp. 1417-1420
- (1993) J. Electron. Mater. , vol.22 , pp. 1417-1420
- Verma, A.K.¹ Tu, J.² Smith, J.S.³ Fujioka, H.⁴ Weber, E.R.⁵

5
- 3042933321
- Effects of low-temperature-grown GaAs and AlGaAs on the current of a metal-insulator-semiconductor structure
- CHEN, C.L., MAHONEY, L.J., NICHOLS, K.B., MANFRA, M.J., BROWN, E.R., NITISHIN, P.M., MOLVAR, K.M., GRAMSTORFF, B.F., and MURPHY, R.A.: 'Effects of low-temperature-grown GaAs and AlGaAs on the current of a metal-insulator-semiconductor structure', J. Vac. Sci. Technol., 1996, B 14, pp. 1745-1751
- (1996) J. Vac. Sci. Technol. , vol.14 B , pp. 1745-1751
- Chen, C.L.¹ Mahoney, L.J.² Nichols, K.B.³ Manfra, M.J.⁴ Brown, E.R.⁵ Nitishin, P.M.⁶ Molvar, K.M.⁷ Gramstorff, B.F.⁸ Murphy, R.A.⁹

6
- 0025434757
- Frequency-dependent electrical characteristics of GaAs MESFETs
- GOLIO, J.M., MILLER, M.G., MARACAS, G.N., and JOHNSON, D.A.: 'Frequency-dependent electrical characteristics of GaAs MESFETs', IEEE Trans. Electron. Devices, 1990, ED-37, pp. 1217-1227
- (1990) IEEE Trans. Electron. Devices , vol.ED-37 , pp. 1217-1227
- Golio, J.M.¹ Miller, M.G.² Maracas, G.N.³ Johnson, D.A.⁴

7
- 0027644441
- Molecular beam epitaxial GaAs grown at low temperatures
- LOOK, D.C.: 'Molecular beam epitaxial GaAs grown at low temperatures', Thin Solid Films, 1993, 231, pp. 61-73
- (1993) Thin Solid Films , vol.231 , pp. 61-73
- Look, D.C.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.