Low frequency noise analysis of LT-GaAs and LT-AI0.3Ga0.7 As MISFET active layers

Electronics Letters

Volumn 34, Issue 21, 1998, Pages 2066-2067

  Rao, R V V V J ^a   Chong, T C ^a   Lau, W S ^a   Tan, L S ^a   Geng, C ^a   Lim, N ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ETCHING; FABRICATION; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON WAFERS; TRANSMISSION LINE THEORY;

ACTIVE LAYERS; LOW FREQUENCY NOISE ANALYSIS; TRANSMISSION LINE MODEL;

MISFET DEVICES;

EID: 0032179363     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981393     Document Type: Article

References (8)

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