Numerical study on the effect of operating parameters on point defects in a silicon crystal during Czochralski growth. I. Rotation effect

Journal of Crystal Growth

Volumn 219, Issue 3, 2000, Pages 205-217

  Kim, Jong Seon ^a   Lee, Tai Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; FLOW PATTERNS; POINT DEFECTS; ROTATION; SEMICONDUCTOR GROWTH;

MAGNETIC CZOCHRALSKI PROCESS;

SEMICONDUCTING SILICON;

EID: 0034298315     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00637-0     Document Type: Article

References (21)

1. Hoshi K., Isawa N., Suzuki T., Ohkubo Y. J. Electrochem. Soc. 132:1985;693.
2. Hoshikawa K., Kohda H., Hirata H. Jpn. J. Appl. Phys. 23:1984;L37.
3. Series R.W. J. Crystal Growth. 97:1989;92.
4. Hirata H., Hoshikawa K. J. Crystal Growth. 96:1989;747.
5. Hicks T.W., Organ A.E., Riley N. J. Crystal Growth. 94:1989;213.
6. Hirata H., Hoshikawa K. J. Crystal Growth. 125:1992;181.
7. Khine Y.Y., Walker J.S. J. Electrochem. Soc. 144:1997;1861.
8. Kim J., Lee T. J. Crystal Growth. 209:2000;55.
9. Voronkov V.V. J. Crystal Growth. 69:1982;625.
10. Tan T.Y., Goesele U. Appl. Phys. A. 37:1985;1.
11. Brown R.A., Maroudas D., Sinno T. J. Crystal Growth. 137:1994;12.
12. Habu R., Tomiura A. Jpn. J. Appl. Phys. 35:1996;1.
13. Puzanov N.I., Eidenzon A.M., Puzanov D.N. J. Crystal Growth. 178:1997;468.
14. Voronkov V.V., Falster R. J. Crystal Growth. 194:1998;76.
15. Togawa S., Izunome K., Kawanishi S., Chung S., Terashima K., Kimura S. J. Crystal Growth. 165:1996;362.
16. Sabhapathy P., Salcudean M.E. J. Crystal Growth. 113:1991;164.
17. F. Morehead, in: M. Stovola, S.J. Pearton, G. Davies (Eds.), Defects in Electronic Materials, Vol. 104, Materials Research Society, 1987, p. 99.
18. Habu R., Iwasaki T., Harada H., Tomiura A. Jpn. J. Appl. Phys. 33:1994;1234.
19. Derby J.J., Brown R.A. J. Crystal Growth. 83:1987;137.
20. Okada Y. Phys. Rev. B. 41:1990;10741.
21. Series R.W., Hurle D.T.J. J. Crystal Growth. 113:1991;305.