Electrical characteristics of magnetic memory cells comprising magnetic tunnel junctions and GaAs diodes

Electronics Letters

Volumn 36, Issue 21, 2000, Pages 1782-1783

  Boeve, H ^a   Sousa, R C ^b   Freitas, P P ^b   De Boeck, J ^a   Borghs, G ^a  

^a IMEC   (Belgium)

^b INESC   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MAGNETIC LEAKAGE; MAGNETIC STORAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SWITCHES; TUNNEL JUNCTIONS;

MAGNETIC MEMORY CELLS;

SEMICONDUCTOR DIODES;

EID: 0034297373     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001242     Document Type: Article

References (7)

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