Using erase self-detrapped effect to eliminate the flash cell program/erase cycling Vth window close

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 24-29

  Lee, J H ^a   Peng, K R ^a   Shih, J R ^a   Chen, S H ^a   Yeh, J K ^a   Su, H D ^a   Ho, M C ^a   Kuo, D S ^a   Liew, B K ^a   Sun, Jack Y C ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR ARRAYS; CURRENT VOLTAGE CHARACTERISTICS; DURABILITY; ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRON TUNNELING; GATES (TRANSISTOR); OXIDES; RELIABILITY; THRESHOLD VOLTAGE;

CHANNEL ERASE CYCLE; ERASABLE PROGRAMMABLE READ ONLY MEMORY; ERASE CYCLING; ERASE SELF DETRAPPED EFFECT; FLASH CELL PROGRAM; FLOATING GATE; NEGATIVE GATE ERASE; SOURCE ERASE; WINDOW CLOSE;

PROM;

EID: 0032646134     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (16)