An Enhanced Erase Mechanism during Channel Fowler-Nordheim Tunneling in Flash EPROM Memory Devices

IEEE Electron Device Letters

Volumn 20, Issue 3, 1999, Pages 140-142

  Chan, Vei Han ^a   Liu, David K Y ^a  

^a AMIC Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL;

ERASABLE PROGRAMMABLE READ ONLY MEMORIES (EPROM); FOWLER-NORDHEIM TUNNELING;

PROM;

EID: 0033097740     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.748914     Document Type: Article

References (5)

1. S. Mukherjee, T. Chang, R. Pan, M. Knecht, and D. Hu, "A single transistor EEPROM cell and its implementation in a 512 K CMOS EEPROM," in IEDM Tech. Dig., 1985, pp. 616-619.
2. S. Haddad, C. Chang, B. Swaminathan, and J. Lien, "Degradation due to hole trapping in flash memory cells," IEEE Electron Device Lett., vol. 10, pp. 117-119, Mar. 1989.
3. J. Chen, T. Chan, I. Chen, P. Ko, and C. Hu, "Subbreakdown drain leakage current in MOSFET," IEEE Electron Device Lett., vol. EDL-8, pp. 515-517, Nov. 1987.
4. S. Wang, "On the I-V characteristics of floating-gates MOS transistors," IEEE Trans. Electron Devices, vol. ED-26, pp. 1292-1294, Sept. 1979.
5. K. Yoshikawa, S. Mori, E. Sakagami, Y. Ohshima, Y. Kaneko, and N. Arai, "Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors," in IEDM Tech. Dig., 1990, pp. 577-580.