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Volumn 60, Issue 11, 1999, Pages 8158-8163

Ab Initio study of the mixed dimer formation in Ge growth on Si(100)

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[No Author keywords available]

Indexed keywords


EID: 0009538402     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.8158     Document Type: Article
Times cited : (13)

References (30)
  • 1
    • 5844406721 scopus 로고
    • One Step Further with Silicon, edited by Y. I. Nissim and E. Rosencher (Kluwer, Dordrecht
    • D. W. Goodman, in Heterostructures on Silicon: One Step Further with Silicon, edited by Y. I. Nissim and E. Rosencher (Kluwer, Dordrecht, 1989).
    • (1989) Heterostructures on Silicon
    • Goodman, D.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.