Electroluminescence simulation of multiquantum well silicon structures

Journal of Applied Physics

Volumn 85, Issue 10, 1999, Pages 7219-7223

  Kholod, A N ^a   Danilyuk, A L ^a   Borisenko, V E ^a   Bassani, F ^b   Menard S ^b   Arnaud d'Avitaya, F ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b CRMC2 CNRS Campus de Luminy   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIELECTRIC FILMS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; FLUORSPAR; NANOSTRUCTURED MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

CALCIUM FLUORIDE; CARRIER RECOMBINATION COEFFICIENTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032620709     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370535     Document Type: Article

References (23)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. Y. Kanemitsu, Phys. Rep. 263, 1 (1995).
3. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
4. G. C. John and V. A. Singh, Phys. Rep. 263, 93 (1995).
5. Abstracts of the II-International Workshop on Light Emitting Low Dimensional Silicon Structures, Lagonissi-Attiki, Greece, 1997.
6. R. T. Collins, P. M. Fauchet, and M. A. Tischler, Phys. Today, 50, 24 (1997).
7. F. Arnaud d'Avitaya, L. Vervoort, F. Bassani, S. Ossicini, A. Fasolino, and F. Bernardini, Europhys. Lett. 31, 25 (1995).
8. L. Vervoort, F. Bassani, I. Mihalcescu, J. C. Vial, and F. Arnaud d'Avitaya, Phys. Status Solidi B 190, 123 (1995).
9. F. Bassani, L. Vervoort, I. Mihalcescu, J. C. Vial, and F. Arnaud d'Avitaya, J. Appl. Phys. 79, 4066 (1996).
10. A. B. Filonov, A. N. Kholod, V. A. Novikov, V. E. Borisenko, L. Vervoort, F. Bassani, A. Saúl, and F. Arnaud d'Avitaya, Appl. Phys. Lett. 70, 744 (1997).
11. A. B. Filonov, A. N. Kholod, V. E. Borisenko, F. Bassani, A. Saúl, and F. Arnaud d'Avitaya, Comput. Mater. Sci. 10, 148 (1998).
12. F. Arnaud d'Avitaya, F. Bassani, I. Mihalcescu, and A. G. Nassiopoulos, in Physics, Chemistry, and Application of Nanostructures, edited by V.E. Borisenko, A.B. Filonov, S.V. Gaponenko, and V.S. Gurin (World Scientific, Singapore, 1997).
13. V. Ionnou-Sougleridis, V. Tsakiri, A. G. Nassiopoulou, P. Photopoulos, F. Bassani, and F. Arnaud d'Avitaya, Phys. Status Solidi A 165, 97 (1997).
14. F. Prengel, A. Wacker, and E. Schöll, Phys. Rev. B 50, 1705 (1994).
15. L. L. Bonilla, J. Galán, J. A. Cuesta, F. C. Martínez, and J. M. Molera, Phys. Rev. B 50, 8644 (1994).
16. K. K. Choi, B. F. Levine, J. Walker, and C. G. Bethea, Phys. Rev. B 35, 4172 (1987).
17. C. B. Duke, Tunneling in Solids. Solid Physics Supplement 10 (Academic, New York, 1969).
18. J. C. Blakemore, Semiconductor Statistics (Pergamon, New York, 1962).
19. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
20. E. O. Kane, J. Appl. Phys. 32, 83 (1961).
21. L. L. Chang, P. J. Stiles, and L. Esaki, J. Appl. Phys. 38, 4440 (1967).
22. V. A. K. Temple, M. A. Green, and J. Schewchun, J. Appl. Phys. 45, 4934 (1974).
23. K. C. Kuo and W. Hwang, Electrical Transport in Solids (Pergamon, New York, 1981).