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Volumn 58, Issue 4, 1998, Pages 2233-2239

Interface and bulk effects in the attenuation of low-energy electrons through thin films

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[No Author keywords available]

Indexed keywords


EID: 0041172130     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.2233     Document Type: Article
Times cited : (9)

References (17)
  • 14
    • 0027543361 scopus 로고
    • A. Rubio et al. (unpublished). We are currently examining the influence of the bulk band structure of (Formula presented) in the inelastic scattering, in particular, the presence of localized states in the conduction band close to the inelastic threshold [see, for instance, N. V. Smith, G. K. Wertheim, A. B. Andrews, and C.-T. Chen, Surf. Sci. Lett. 282, L359 (1993)].
    • (1993) Surf. Sci. Lett. , vol.282 , pp. L359
    • Smith, N.1    Wertheim, G.2    Andrews, A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.