Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K

Surface and Interface Analysis

Volumn 28, Issue 1, 1999, Pages 173-176

  Li, W S ^a   Shen, Z X ^a   Feng, Z C ^a   Chua, S J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHONONS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM NITRIDE; TRANSVERSE EFFECTIVE CHARGE;

SEMICONDUCTING FILMS;

EID: 0032640465     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199908)28:1<173::AID-SIA601>3.0.CO;2-7     Document Type: Article

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