Simulation study on Si and Ge film growth by cluster deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 170, Issue 1, 2000, Pages 71-78

  Lu, H W ^a   Xie, J Q ^a   Feng, J Y ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEPOSITION; DIFFUSION; FILM GROWTH; GERMANIUM; MOLECULAR DYNAMICS; SILICON; TEMPERATURE;

CLUSTER DEPOSITION; INCIDENT CLUSTER VELOCITY; MODERATE CLUSTER VELOCITY; MOLECULAR DYNAMIC SIMULATION;

THIN FILMS;

EID: 0034275560     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00060-4     Document Type: Article

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