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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 142, Issue 1-2, 1998, Pages 77-82

Molecular-dynamics simulation of silicon film growth from cluster beams

(2) Xie, J Q a Feng, J Y a

a TSINGHUA UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COMPUTER SIMULATION; DIFFUSION; ELECTRON BEAMS; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; SILICON; SURFACES; THIN FILMS;

CLUSTER; FILM STRUCTURE; IONIZED CLUSTER BEAM; MOLECULAR DYNAMICS SIMULATION; STILLINGER-WEBER INTERACTION POTENTIAL; SURFACE DIFFUSION;

FILM GROWTH;

EID: 0032090493 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(98)00230-4 Document Type: Article

Times cited : (9)

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