Laterally oxidised InAIAs-oxide/lnP distributed Bragg reflectors

Electronics Letters

Volumn 32, Issue 18, 1996, Pages 1671-1673

  Takenouchi, H ^a   Kagawa, T ^a   Ohiso, Y ^a   Tadokoro, T ^a   Kurokawa, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Distributed bragg reflector lasers; Surface emitting lasers; Vertical cavity

Indexed keywords

LASER RESONATORS; LIGHT ABSORPTION; OXIDATION; OXIDES; REFRACTIVE INDEX; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS;

DISTRIBUTED BRAGG REFLECTOR LASER; LATERAL OXIDATION; OXIDENT DIFFUSION; VERTICAL CAVITY SURFACE EMITTING LASERS;

MIRRORS;

EID: 0030217309     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961097     Document Type: Article

References (9)

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