A method of highly efficient hydrolyzation oxidation of III-V semiconductor lattice matched to indium phosphide

Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1264-1266

  Koley, B ^a   Johnson, F G ^b   King, O ^b   Saini, S S ^a   Dagenais, M ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SUBSTRATES;

HYDROLYZATION OXIDATION; INDUCTIVELY COUPLED PLASMAS (ICP); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR SUPERLATTICES;

EID: 0032621778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124662     Document Type: Article

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