Scaling properties of step bunches formed on vicinal crystal surfaces during MBE growth

Surface Science

Volumn 464, Issue 1, 2000, Pages

  Stoyanov, S ^a  

^a INSTITUTE OF PHYSICAL CHEMISTRY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTROMIGRATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SINGLE CRYSTALS; SURFACE ROUGHNESS;

ADATOMS; STEP BUNCHING;

SILICON;

EID: 0034274877     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00701-9     Document Type: Article

References (17)

1. Stoyanov S. Jpn. J. Appl. Phys. 29:1990;L659.
2. Stoyanov S. Jpn. J. Appl. Phys. 30:1991;1.
3. Stoyanov S. Appl.Surf. Sci. 60-61:1992;55.
4. Stoyanov S., Tonchev V. Phys. Rev. B. 58:1998;1590.
5. Stoyanov S. Surf. Sci. 370:1997;345.
6. Stoyanov S. Surf. Sci. 416:1998;200.
7. Fujita K., Ichikawa M., Stoyanov S. Phys.Rev. B. 60:1999;16 006.
8. Homma Y., Aizawa N. Phys. Rev. B. 2000;. in press.
9. Stoyanov S., Ichikawa M., Doi T. Jpn. J. Appl. Phys. 32:1993;2047.
10. Burton W., Cabrera N., Frank F.C. Philos. Trans. R. Soc. London, Ser. A. 243:1951;299.
11. Krug J. Kim D., et al. Dynamics of Fluctuating Interfaces and Related Phenomena. 1997;World Scientific, Singapore.
12. Uwaha M. Phys. Rev. B. 46:1992;4364.
13. Natori A. Jpn. J. Appl. Phys., Part 1. 33:1994;3538.
14. Latyshev A.V., Aseev A.L., Krasilnikov A.B., Stenin S.I. Surf. Sci. 213:1989;157.
15. Homma Y., Mcclelland R.J., Hibino H. Jpn. J. Appl. Phys. 29:1990;L2254.
16. Fu E.S., Liu D.-J., Johnson M.D., Weeks J.D., Williams E. Surf. Sci. 385:1997;259.
17. Stoyanov S., Metois J.J., Tonchev V. Surf. Sci. 2000;. in press.