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Diamond and Related Materials

Volumn 9, Issue 9, 2000, Pages 1640-1645

High quality heteroepitaxial diamond films on silicon: recent progresses

(3) Jiang, X a Fryda, M a Jia, C L b

a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ETCHING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; TEXTURES; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HOT FILAMENT CHEMICAL VAPOR DEPOSITION; ION ASSISTED DEPOSITION; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0034274274 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(00)00326-5 Document Type: Article

Times cited : (29)

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