Recent developments in heteroepitaxial nucleation and growth of diamond on silicon

Physica Status Solidi (A) Applied Research

Volumn 154, Issue 1, 1996, Pages 175-183

  Jiang, X ^a   Klages, C P ^a  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; GRAIN BOUNDARIES; INTERFACES (MATERIALS); ION BOMBARDMENT; NUCLEATION; REACTION KINETICS; SILICON WAFERS;

CRYSTALLITES; GRAIN BOUNDARY ANGLE DISTRIBUTION; HETEROEPITAXIAL NUCLEATION; HETEROEPITAXY;

DIAMOND FILMS;

EID: 0030104195     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.2211540114     Document Type: Article

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