Metal-to-metal antifuse with amorphous Ti-rich barium titanate film and silicon oxide film

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 469-472

  Lee, Jae Sung ^a   Lee, Young Hyun ^b  

^a Uiduk University   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; RELIABILITY; SANDWICH STRUCTURES; SEMICONDUCTING FILMS; TITANIUM OXIDES;

METAL-TO-METAL ANTIFUSE;

FIELD PROGRAMMABLE GATE ARRAYS;

EID: 0033097011     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00317-7     Document Type: Article

References (6)

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2. Hu C. Interconnection devices for field programmable gate arrays. IEEE IEDM Tech. Dig. 1992;61:591.
3. Tamura Y, Shinriki H. Most promising metal-to-metal antifuse based from 10 nm thick p-SiN film for high density and high speed FPGA application. IEEE IEDM Tech. Dig. 1994;63:285.
4. 0.9 system. J. Noncryst. Solids 1995;187:149.
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6. 2. J. Am. Ceram. Soc. 1955;38(3):102.