Dependence of strain at the (111)Si/SiO2 interface on interfacial Si dangling-bond concentration

Materials Science and Engineering A

Volumn 288, Issue 2, 2000, Pages 239-243

  Nouwen, B ^a   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; MATHEMATICAL MODELS; SILICA; SILICON; STRAIN; STRESS RELAXATION; THERMOOXIDATION;

DANGLING-BOND CONCENTRATION;

INTERFACES (MATERIALS);

EID: 0034273982     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(00)00849-2     Document Type: Article

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