Dipolar interactions between unpaired Si bonds at the (1 1 1)Si/SiO2 interface

Materials Science and Engineering: B

Volumn 58, Issue 1-2, 1999, Pages 52-55

  Stesmans, A ^a   Nouwen, B ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Defects; Dipolar interaction; Electron spin resonance; Si SiO2 interface

Indexed keywords

ANISOTROPY; ANNEALING; APPROXIMATION THEORY; CHEMICAL BONDS; DEGRADATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; HYDROGEN; MAGNETOSTATICS; MATHEMATICAL MODELS; OXIDATION; SILICA; SILICON;

MAGNETOSTATIC APPROXIMATION;

INTERFACES (MATERIALS);

EID: 0345504129     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00274-8     Document Type: Article

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