Diamond electronics: defect passivation for high performance photodetector operation

Physica Status Solidi (A) Applied Research

Volumn 181, Issue 1, 2000, Pages 121-128

  Whitfield, M D ^a   Lansley, S P ^a   Gaudin, O ^a   McKeag, R D ^b   Rizvi, N ^c   Jackman, R B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b Centronic Ltd   (United Kingdom)

^c Exitech Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRODES; EXCIMER LASERS; MORPHOLOGY; PHOTOCONDUCTING DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET DETECTORS;

DEFECT PASSIVATION; DIAMOND ELECTRONICS; HIGH POWER EXCIMER LASER; INTERDIGITATED PLANAR ELECTRODE; POLYCRYSTALLINE CHEMICAL VAPOR DEPOSITION DIAMOND; POST GROWTH TREATMENT;

SEMICONDUCTING DIAMONDS;

EID: 0034273881     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200009)181:1<121::AID-PSSA121>3.0.CO;2-J     Document Type: Article

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