Diffuse reflectance spectroscopy for in situ process monitoring and control during molecular beam epitaxy growth of InGaAs/AlGaAs pseudomorphic high electron mobility transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2518-2522

  Guyer, J E ^a   Tseng, W F ^a   Pellegrino, J G ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; DEPOSITION; DESORPTION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TEMPERATURE CONTROL; THERMAL EFFECTS; THERMOCOUPLES;

DIFFUSE REFLECTANCE SPECTROSCOPY (DRS); PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034268829     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1310660     Document Type: Article

References (21)

1. S. R. Johnson, C. Lavoie, T. Tiedje, and J. A. Mackenzie, J. Vac. Sci. Technol, B 11, 1007 (1993).
2. T. P. Pearsall et al., Rev. Sci. Instrum. 66, 4977 (1995).
3. S. R. Johnson, Ph.D. dissertation, University of British Columbia, 1995.
4. Z. Z. Wang et al., J. Vac. Sci. Technol. B 15, 116 (1997).
5. S. M. Newstead, R. A. A. Kubiak, and E. H. C. Parker, J. Cryst. Growth 81, 49 (1987).
6. C. H. Kuo et al., J. Vac. Sci. Technol. B 12, 1214 (1994).
7. A. J. SpringThorpe, S. J. Ingrey, B. Emmerstorfer, and P. Mandeville, Appl. Phys. Lett. 50, 77 (1987).
8. Certain commercial products are identified in this paper in order to adequately specify procedures being described. In no case does such identification imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that the material identified is necessarily the best for the purpose.
9. S. R. Johnson and T. Tiedje, J. Cryst. Growth 175, 273 (1997).
10. R. F. C. Farrow, Molecular Beam Epitaxy: Applications to Key Materials (Noyes, Park Ridge, NJ, 1995).
11. A. Dimoulas et al., Compound Semiconductors 1996, Institute of Physics Conference Series (IOP Publishing Ltd. Bristol, 1997), Vol. 155, pp. 69-72.
12. S. I. Molina and T. Walther, Thin Solid Films 307, 6 (1997).
13. J. J. Rosenberg et al., IEEE Electron Device Lett. 6, 491 (1985).
14. L. W. Lu et al., J. Cryst. Growth 169, 637 (1996).
15. J. M. Ballingall et al., Appl. Phys. Lett. 54, 2121 (1989).
16. W. E. Hoke et al., J. Appl. Phys. 81, 968 (1997).
17. W. E. Hoke et al., J. Vac. Sci. Technol. B 11, 962 (1993).
18. L. D. Nguyen et al., IEEE Electron Device Lett. 35, 139 (1988).
19. C. K. Peng et al., Mater. Chem. Phys. 45, 92 (1996).
20. N. X. Nguyen, W.-N. Jiang, K. A. Baumann, and U. K. Mishra, Electron. Lett. 31, 586 (1995).
21. N. Moll, M. R. Hueschen, and A. Fischer-Colbrie, IEEE Trans. Electron Devices 35, 879 (1988).