Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 637-642

  Lu, Liwu ^a,b   Feng, Songlin ^a   Liang, Jiben ^a   Wang, Zhanguo ^a   Wang, J ^b   Wang, Y ^b   Ge, Weikun ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; HYDROGENATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OXYGEN; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

DEEP CENTERS; HYDROGEN PLASMA TREATMENT; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PMHEMT); VAN DER PAUW TECHNIQUES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030566553     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00473-3     Document Type: Article

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