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Volumn 307, Issue 1-2, 1997, Pages 6-9
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Transmission electron microscopy study of Si δ-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
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Author keywords
Heterostructures; Interfaces; Semiconductors; Transmission electron microscopy
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Indexed keywords
CRYSTAL ORIENTATION;
HETEROJUNCTIONS;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
STRAIN MEASUREMENT;
STRAIN MODULATION;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0031248002
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(97)00245-9 Document Type: Article |
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Times cited : (2)
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References (12)
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