Epitaxial structure dependence of the linewidth enhancement factor in GaAs and InGaAs quantum well lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2994, Issue , 1997, Pages 542-551

  Stohs, Jonathan ^a   Gallant, David J ^a   Bossert, David J ^a   Brueck, Steven R ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COHERENT LIGHT; EPITAXIAL GROWTH; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CURRENT DENSITY; LINEWIDTH ENHANCEMENT;

SEMICONDUCTOR LASERS;

EID: 0031357560     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)