Strain Dependence of the Linewidth Enhancement Factor in Long-Wavelength Tensile-and Compressive-Strained Quantum-Well Lasers

IEEE Photonics Technology Letters

Volumn 5, Issue 9, 1993, Pages 983-986

  Kimura, Akitaka ^a   Nido, Masaaki ^a   Murata, Shieeru ^a   Shimizu, Jun Ichi ^a   Naniwae, Kouichi ^a   Suzuki, Akira ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; STRAIN;

COMPRESSIVE STRAINED; LINEWIDTH ENHANCEMENT FACTOR; LONG WAVELENGTH; STRAIN DEPENDENCE; TENSILE STRAINED;

SEMICONDUCTOR LASERS;

EID: 0027659882     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.257166     Document Type: Article

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