Characterization of ZnSe films grown on GaAs substrates with InxGa1-xAs and AlxGa1-xAs buffer layers

Thin Solid Films

Volumn 373, Issue 1-2, 2000, Pages 37-40

  Luyo Alvarado, J ^a   Santana Aranda, M A ^a   Melendez Lira M ^a   Lopez Lopez M ^a   Mendez V H ^a   Vidal, M A ^b   Yonezu, H ^c  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSIDAD AUTÓNOMA DE SAN LUIS POTOSÍ   (Mexico)

^c TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ENERGY GAP; FILM GROWTH; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM ARSENIDE; OPTICAL SPECTROSCOPY; PHOTOREFLECTANCE SPECTROSCOPY; ZINC SELENIDE;

SEMICONDUCTING FILMS;

EID: 0034262463     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01087-7     Document Type: Article

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