Investigation of the structural properties of MBE grown ZnSe/GaAs heterostructures

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 571-576

  Hernandez Calderon I ^a   Lopez Luna E ^a   Luyo, J ^a   Melendez Lira M ^a   De Melo, O ^a   Diaz P ^a   Hernandez L ^a   Fuentes, J ^a   Leon R ^a   Sitter, H ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Auger; Critical thickness; Photoluminescence; Raman; Semiconductor interfaces; X ray diffraction; ZnSe; ZnSe GaAs heterostructures

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; FILM GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; SUBSTRATES; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

CRITICAL FILM THICKNESS; ZINC SELENIDE;

HETEROJUNCTIONS;

EID: 0031141820     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01215-8     Document Type: Article

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