Magnetostatic coupling in spin dependent tunnel junctions

IEEE Transactions on Magnetics

Volumn 36, Issue 5 I, 2000, Pages 2802-2805

  Wang, Dexin ^a   Daughton, James M ^a   Reed, Daniel ^a   Wang, Wen D ^b   Wang, Jian Qing ^b  

^a NVE CORPORATION   (United States)

^b UNIVERSITY OF NEW ORLEANS   (United States)

Author keywords

GMR; Magnetic coupling; Magnetic sensor; MTJ; Neel coupling; Neel Wall coupling; SDT

Indexed keywords

HYSTERESIS; MAGNETOSTATICS; PHOTOLITHOGRAPHY; SENSORS; TRANSMISSION ELECTRON MICROSCOPY; TUNNEL JUNCTIONS;

MAGNETOSTATIC COUPLINGS; SPIN DEPENDENT TUNNELING (SDT) MATE;

MAGNETIC COUPLINGS;

EID: 0034260779     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.908594     Document Type: Article

References (12)

1. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions
2. Thermal stability of spin dependent tunneling junctions pinned with IrMn
3. Spin dependent tunneling/spin valve devices with different pinning structures made by photolithography
4. High thermal stability spin tunnel junctions prepared by ion beam sputtering
5. Magnetic tunneling applied to memory
6. Picotesla field sensor design using spin-dependent tunneling devices
7. Finite magnetic film thickness on Neel coupling in spin valve
8. Interlayer coupling and surface roughness in GMR spin valves
9. Topological coupling in spin valve type multilayers
10. Memoires et communications
11. Prediction of switching/rotation of the magnetization direction with applied voltage in a controllable interlayer exchange coupled system
12. Domain walls in antiferromagnetically coupled multi-layered films