Post-irradiation dopant passivation in MOS capacitors exposed to high doses of x-rays

Semiconductor Science and Technology

Volumn 13, Issue 11, 1998, Pages 1313-1316

  De Vasconcelos, Elder A ^a,b   Da Silva Jr , Eronides F ^a  

^a FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; PASSIVATION; SEMICONDUCTOR DOPING; X RAYS;

POST-IRRADIATION DOPANT PASSIVATION;

MOS CAPACITORS;

EID: 0032205362     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/11/015     Document Type: Article

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