Atomic structure of an unusual linear defect at the (001)InAs/(001)GaAs epitaxial interface

Surface and Interface Analysis

Volumn 30, Issue 1, 2000, Pages 616-619

  Loubradou, M ^a   Bonnet, Roland ^a   Chen, F R ^b  

^a GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; DEPOSITION; DISLOCATIONS (CRYSTALS); ELASTICITY; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

BURGERS VECTOR CONTENT; DISLOCATION DISTRIBUTION; EPITAXIAL INTERFACE;

INTERFACES (MATERIALS);

EID: 0034244728     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200008)30:1<616::AID-SIA714>3.0.CO;2-4     Document Type: Article

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