Avalanche light-emitting diodes operating at room temperature based on single-crystal Si : Ho : O

Semiconductors

Volumn 33, Issue 8, 1999, Pages 850-851

  Sobolev, N A ^a   Emel'yanov, A M ^a   Nikolaev, Yu A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033177546     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187796     Document Type: Article

References (6)

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2. B. A. Andreev, N. A. Sobolev, D. I. Kuritsyn, M. I. Makhoviǐchuk, Yu. A. Nikolaev, and E. O. Parshin, Fiz. Tekh. Poluprovodn. 33, 420 (1999) [Semiconductors 33, 462 (1999)].
3. N. A. Sobolev, A. M. Emel'yanov, R. N. Kyutt, Yu. A. Nikolaev, E. I. Shek, O. V. Aleksandrov, A. O. Zakhar'in, V. I. Vdovin, M. I. Makoviǐchuk, E. O. Parshin, and A. N. Yakimenko, Abstracts of the Conference "Nanostructures" (Nizhniǐ Novgorod, 1999, p. 71).
4. F. G. Chynoweth and K. G. McKay. Phys. Rev. 102, 369 (1956).
5. G. Franzo, S. Goffa, and F. Priolo, J. Appl. Phys. 81, 2784 (1997).
6. N. A. Sobolev, Yu. A. Nikolaev, A. M. Emel'yanov, K. F. Shtel'makh, P. E. Khakuashev, and M. A. Trishenkov, J. Lumin. 80, 315 (1999).