Mobility modulation of two-dimensional hole gas in a p-type Si/SiGe modulation doped heterostructure by back-gating

Semiconductor Science and Technology

Volumn 13, Issue 12, 1998, Pages 1477-1479

  Tezuka, Tsutomu ^a   Hatakeyama, Tetsuo ^a   Imai, Seiji ^a   Sugiyama, Naoharu ^a   Kurobe, Atsushi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTATIONAL METHODS; ELECTRIC POTENTIAL; ELECTRON SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

BACK-GATING MEASUREMENT; TWO-DIMENSIONAL HOLE GAS;

HETEROJUNCTIONS;

EID: 0032289935     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/12/003     Document Type: Article

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