Cryogenically Cooled Performance of a Monolithic 44-GHz InP-Based HEMT Low-Noise Amplifier

IEEE Microwave and Guided Wave Letters

Volumn 5, Issue 9, 1995, Pages 281-283

  Wang, Huei ^a   Lo, Dennis Chung Wen ^a   Lai, Richard ^a   Yang, Cheng Chih ^a   Berenz, John ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTRIC NETWORK PARAMETERS; EQUIVALENT CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; LOW TEMPERATURE EFFECTS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SIGNAL TO NOISE RATIO; SPURIOUS SIGNAL NOISE;

CRYOGENIC COOLING; LOW NOISE AMPLIFIER;

MICROWAVE AMPLIFIERS;

EID: 0029378978     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.410397     Document Type: Article

References (15)

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