Epitaxial growth of cubic SiC films on Si substrates by high vacuum chemical vapor deposition using 1,3-disilabutane

Journal of the Electrochemical Society

Volumn 144, Issue 4, 1997, Pages 1474-1476

  Lee, K W ^a   Yu, K S ^a   Boo, J H ^a   Kim, Y ^a   Hatayama, T ^b   Kimoto, T ^b   Matsunami, H ^b  

^a Korea Research Institute of Chemical Technology   (South Korea)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; SILICON; SILICON CARBIDE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CUBIC SILICON CARBIDE FILMS; HIGH VACUUM DEPOSITION; SILICON SUBSTRATE;

EPITAXIAL GROWTH;

EID: 0031121783     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837614     Document Type: Article

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