Properties of optically active Si:Er and Si1-xGex layers grown by the sublimation MBE method

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 426-430

  Stepikhova, M V ^a   Andreev, B A ^a   Shmagin, V B ^a   Krasil'nik, Z F ^a   Kuznetsov, V P ^b   Shengurov, V G ^b   Svetlov, S P ^b   Jantsch, W ^c   Palmetshofer, L ^c   Ellmer, H ^c  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; EMISSION SPECTROSCOPY; ERBIUM; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBLIMATION; WAVEGUIDES;

SUBLIMATION MOLECULAR BEAM EPITAXY;

SEMICONDUCTING FILMS;

EID: 0034227469     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00906-8     Document Type: Article

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