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Volumn 216, Issue 1, 1999, Pages 481-486

Highly photo-excited nitride quantum wells: Threshold for exciton bleaching

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EID: 0033229232     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<481::AID-PSSB481>3.0.CO;2-K     Document Type: Article
Times cited : (4)

References (9)
  • 2
    • 85033946059 scopus 로고    scopus 로고
    • S. NAKAMURA, Proc. 3rd Internat. Conf. Nitride Semiconductors, Montpellier, July 5 to 9, 1999; phys. stat. sol. (a) 176, 15 (1999).
    • (1999) Phys. Stat. Sol. (A) , vol.176 , pp. 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.