Effect of atomic hydrogen on GaAs growth on GaAs(311)A substrate in molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4266-4269

  Jang, Kee Youn ^a   Okada, Yoshitaka ^a   Kawabe, Mitsuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Atomic force microscopy (AFM); Atomic H assisted molecular beam epitaxy (H MBE); GaAs (311)A substrate; GaAs growth; Growth mechanisms; Molecular beam epitaxy (MBE); Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRUGATED MATERIALS; HYDROGEN; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SURFACE STRUCTURE;

ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY (H-MBE); GROWTH MECHANISMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034225103     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4266     Document Type: Article

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