Semiconductor nanostructures formed by the Turing instability

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1086-1088

  Temmyo, Jiro ^a   Nötzel, Richard ^a,b   Tamamura, Toshiaki ^a  

^a NTT CORPORATION   (Japan)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; SURFACES;

MILLER INDEX; SELF ORGANIZATION; TURING INSTABILITY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031209692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119735     Document Type: Article

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