Effect of hydrogen in AlGaAs grown by atomic hydrogen-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 54-58

  Jang, Kee Youn ^a   Okada, Yoshitaka ^a   Kawabe, Mitsuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Al content; Aluminum gallium arsenide; Atomic hydrogen; Molecular beam epitaxy; Photoluminescence; RHEED oscillation

Indexed keywords

COMPOSITION EFFECTS; EVAPORATION; HYDROGEN; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

ATOMIC HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR GROWTH;

EID: 0033079699     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00886-0     Document Type: Article

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