4-monolayer-height layer-by-layer growth and increase of the critical thickness of Ge heteroepitaxy on boron-preadsorbed Si(111) surface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 4 B, 1996, Pages

  Kumagai, Yoshinao ^a   Ishimoto, Kouichi ^a   Mori, Ryosuke ^a   Tee, Keh Ming ^a   Ishibashi, Takayuki ^a   Kawabe, Mitsuo ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BORON; EPITAXIAL GROWTH; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; THICKNESS MEASUREMENT; THREE DIMENSIONAL;

BORON PREADSORPTION; CRITICAL THICKNESS; LAYER BY LAYER GROWTH; STRANSKI-KRASTANOV GROWTH MODE; SURFACE MIGRATION; SURFACE SEGREGATION; THREE DIMENSIONAL ISLANDS; TWO DIMENSIONAL ISLANDS;

SEMICONDUCTING SILICON;

EID: 0030123598     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l476     Document Type: Article

References (15)